Band Edge Emission Improvement by Energy Transfer in Hybrid III-Nitride/Organic Semiconductor Nanostructure**Supported by the National Key Technology Research and Development Program under Grant No 2016YFB0400100, the National Basic Research Program of China under Grant No 2012CB619304, the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305, the National Natural Science Foundation of China under Grant Nos

Abstract

GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2-methoxy-5-(2-ethyl)hexoxy-1,4-phenylenevinylene] (MEH-PPV)/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-efficiency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescence (PL) spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.