Abstract
We have theoretically investigated the valence-band discontinuity (ΔEv) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the sp3s* basis in the (GaAs)5/(InAs)1/(AlAs)5/(InAs)1 [100] superlattice. ΔEv at the GaAs/InAs(1ML)/AlAs interface is calculated to be 0.50 eV, which is practically equal to ΔEv = 0.51 eV at the GaAs/AlAs interface with no InAs layers. The insertion of the InAs monolayer changes the detail of valence charge density at the GaAs/AlAs interface but does not change ΔEv. The result of calculation is in consistent with our experimental measurement by using the x-ray photoelectron spectroscopy.
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