Abstract
Photoemission spectromicroscopy data on Si–GaSe with 0.2 μm lateral resolution revealed laterally inhomogeneous interface Se–Si chemical reactions. The local Si 2p fits agrees with interface Si selenide parameters; the Se 3d peaks indicate a Si–selenide component; the Ga 3d peaks exhibit a metallic component whose intensity increases with Si coverage. This local interface reaction is related to lateral changes in the band lineup.
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