Abstract
Cubic silicon carbide (3C-SiC) is a particularly promising material for high and medium power MOS transistors, because it offers higher inversion channel mobility than other SiC polytypes. Optimizing the field effect devices made of 3C-SiC and choosing the appropriate materials to be incorporated in the device requires knowledge of the investigated structure band diagram. Hence, the first part of this work is devoted to determination of band diagrams of various MOS structures on 3C-SiC substrates. Since trap densities and distributions are still important for field effect devices on 3C-SiC substrates, the second part of this work is devoted to this problem.
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