Abstract

The insertion of LiF for an interlayer material between the Al cathode and tris-(8-hydroxyquinoline) aluminum (Alq3) in the organic light-emitting diodes (OLEDs) provides an improved device performance. The highly occupied molecular orbital (HOMO) level lowering in the Alq3 layer induced by a low-coverage LiF deposition results in the reduction of electron injection barrier height. We investigated the electronic structure of the interface between the ultrathin LiF and the Alq3 layer, using synchrotron x-ray photoelectron emission spectroscopy. The results revealed that the major origin of the HOMO level lowering is not the chemical bonding of dissociated fluorine in the Alq3 layer but the band bending caused by charge redistribution driven by work function difference between LiF and Alq3 layer.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.