Band bending induced resonant tunneling in ferroelectric tunnel junctions

Abstract

Aside from direct tunneling, resonant tunneling could be introduced into ferroelectric tunnel junctions (FTJs) to improve the functionalities. Using a quantum-mechanical model of tunneling, we studied the band bending induced resonant tunneling in FTJs where the band bending could be realized by a proper composite layer and an interface dipole layer. We hope that our work could stimulate further studies of resonant tunneling effects in FTJs.