Abstract
We present angle-resolved ultraviolet and soft-x-ray photoelectron spectroscopy results for the Schottky-barrier formation of Ga on p-type Si(113). For the first 0.08 monolayer of Ga, the band bending increases. For higher coverages, it decreases monotonically until it reaches its final value at about 2 monolayers. This change of band bending is found for a Si surface for the first time and supports a recent model calculation. The final barrier height is 0.32\ifmmode\pm\else\textpm\fi{}0.10 eV, in good agreement with the values found for low-index surfaces.
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