Abstract
ZnOxSe1−x layers with x ≤ 1.35% were studied by photoreflectance at 80 K. Careful analysis of the PR spectra allowed the identification of the optical transitions from the valence band to the E− and E+ subbands originating from the band anticrossing interaction between the resonant oxygen level and the conduction band of the ZnSe host. In addition, it was possible to resolve a strain-induced splitting of the valence band into the heavy- and light-hole subbands. The strain changes from compressive to tensile with increasing oxygen concentration for these ZnOxSe1−x layers grown on a GaAs substrate.
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