Abstract
High-k and wide bandgap materials are necessary to work as gate dielectrics and surface passivation layers in β-phase gallium oxide (β-Ga2O3) based metal–oxide–semiconductor (MOS) devices. The band offsets between these materials and β-Ga2O3 play an important role in the properties of the devices. In this work, we grew β-Ga2O3 thin films on MgO, sapphire and MgAl2O4 single crystal substrates by the radio-frequency magnetron sputtering method, and used x-ray photoelectron spectroscopy to measure the β-Ga2O3/MgO, β-Ga2O3/Al2O3, and β-Ga2O3/MgAl2O4 heterointerfaces. The valence band offsets were determined to be −0.65(±0.17) eV (staggered gap, type II alignment), 0.57(±0.07) eV (straddling gap, type I alignment), and 0.64(±0.23) eV (straddling gap, type I alignment) for β-Ga2O3 on sapphire (0 0 0 1), MgO (100), and MgAl2O4 (1 0 0) substrates, leading to the large conduction band offsets of over 2 eV accordingly. The results suggested that these materials can be used to construct heterojunctions with β-Ga2O3 in MOS devices for their excellent electron confinement properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
