Abstract
X-ray photoelectron spectroscopy has been used to study band offsets at the n-SnO2/p-GaN hetero-junction. The valence-band offset (ΔEV) and the conduction-band offset (ΔEc) are determined to be 0.97 ± 0.2 eV and 0.77 ± 0.2 eV respectively, indicating that the n-SnO2/p-GaN hetero-junction has a type II band alignment.
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