Abstract
The natural band alignment between various II–IV-N2 and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
