Abstract
The band alignments between Atomic-Layer-Deposited (ALD) high-k ZrO 2 and wide bandgap semiconductors: GaN, AlN and SiC were investigated using X-ray photoelectron spectroscopy (XPS). Based on angle-resolved XPS measurements combined with numerical calculations, the conductor and valence band discontinuities at the interface between ZrO 2 and wide bandgap semiconductors were determined by taking surface band bending and potential gradient in ZrO 2 layer into account.
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