Band alignment at metal–semiconductor and metal–oxide interfaces

Abstract

AbstractThe mechanisms of Schottky barrier formation are reviewed from the metal‐induced gap state model to the universal defect model, and the chemical reaction model. The recent progress in understanding barrier heights and band offsets in Si – high dielectric constant oxide and metal high dielectric constant oxide systems is then discussed, and interesting they contain components of each model. The greater emphasis on understanding defect reactions has allowed us to separate the effects of intrinsic mechanisms, metal induced gap states (MIGS) and extrinsic mechanisms (defects).