Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy

Abstract

Nonvolatile memory elements, known as memristors, have recently received an attention boost by introducing transition-metal oxide /transition-metal bilayer structures. These structures enable the engineering of the electrical properties of the devices and the removal of unwanted forming steps though a redox-reaction at the interface. This work provides much needed information for the understanding of memristive behavior in such devices by providing the first systematic study of the electronic band alignment at the interface, which plays essential role in charge carrier transport.