Abstract
Nonvolatile memory elements, known as memristors, have recently received an attention boost by introducing transition-metal oxide /transition-metal bilayer structures. These structures enable the engineering of the electrical properties of the devices and the removal of unwanted forming steps though a redox-reaction at the interface. This work provides much needed information for the understanding of memristive behavior in such devices by providing the first systematic study of the electronic band alignment at the interface, which plays essential role in charge carrier transport.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
