Abstract

Summary Emerging all-inorganic perovskite nanocrystals can retain a desired crystal structure under ambient conditions and offer easy solution processability. In this work, we have demonstrated CsPbI3 perovskite quantum dot (QD) solar cells with a remarkable efficiency approaching 13% and an extremely low energy loss of 0.45 eV by employing a series of dopant-free polymeric hole-transporting materials (HTMs). The CsPbI3 QD solar cells use polymer HTMs to achieve efficient charge extraction at QD/polymer interfaces and avoid device instability caused by complex doping and oxidation processes required by conventional Spiro-OMeTAD. Meanwhile, the CsPbI3 QD photovoltaic devices can be fabricated at room temperature and exhibit more reproducible film quality, showing potential advantages over current all-inorganic thin-film perovskite solar cells. We believe that our findings will catalyze the development of new device structures, specifically for perovskite QDs, and help realize the promising potential of all-inorganic perovskite solar cells.

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