Abstract

Hexaferrites have become important candidates for a variety of microwave and millimeter wave devices due to their large uniaxial magneto-crystalline anisotropy and high saturation magnetization. The goal of the present investigation is to synthesize Barium hexaferrite/Yttrium Iron Garnet (BaFe12O19/Y3Fe5O12): (BaM/YIG) Nano-Composites (NCs) to be used in broad band microwave frequency range applications, especially as microwave absorber. X-ray diffractometry, Vibrating Sample Magnetometer (VSM), and ferromagnetic resonance (FMR) techniques were used to characterize these NCs. Using a Cu coplanar wave guide and a Vector Network Analyzer, broadband (C to U) microwave absorption were investigated by placing the bulk sample in flip chip mode. Various mathematical models were employed to fit the experimental data to yield intrinsic and extrinsic damping parameters.

Highlights

  • Today the need for creating composite materials is not limited in just magnets and used in electronic devices such as magnetic recorder, microwave absorber etc

  • The potential advantages of these materials are related to environmental pollution caused by the Electromagnetic Interference (EMI) due to vast use of electronic equipment, computerized networks, cell phones etc

  • No other phase other than BaM and YIG is detected in the Barium hexaferrite/Yttrium Iron Garnet (BaFe12O19/Y3Fe5O12): (BaM/YIG) composite XRD data

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Summary

Introduction

Today the need for creating composite materials is not limited in just magnets and used in electronic devices such as magnetic recorder, microwave absorber etc. The use of ferrites in present study is important because the penetration of em waves is possible in ferrites because they are non-conducting in nature. In contrast it is limited in metals because of the skin effect. With the appropriate material substitutions, the saturation magnetization and the effective anisotropy field may be varied for device operation over a wide range of frequencies. Large magnetic losses hinder the use of these materials in resonant devices

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