Ballistic transport in InGaN-based LEDs: impact on efficiency

Abstract

Heterojunction light-emitting diodes (LEDs) based on the InGaN/GaN system have improved considerably but still suffer from efficiency degradation at high injection levels which unless overcome would aggravate LED lighting. Although Auger recombination has been proposed as the genesis of the efficiency degradation, it appears that the premise of electron overflow and non-uniform distribution of carriers in the active region being the immediate impediment is gaining popularity. The lack of temperature sensitivity and sizeable impact of the barrier height provided by an electron blocking layer and the electron cooling layer prior to electron injection into the active region suggest that the new concept of hot electrons and ballistic/quasi-ballistic transport be invoked to account for the electron overflow. The electron overflow siphons off the electrons before they can participate in the recombination process. If the electrons are made to remain in the active region e.g. by cooling them prior to injection and/or blocking the overflow by an electron blocking layer, they would have to either recombine, radiatively or nonradiatively (e.g. Shockley–Read–Hall and Auger), or accumulate in the active region. The essence of the proposed overflow model is in good agreement with the experimental electroluminescence data obtained for m-plane and c-plane LEDs with/without electron blocking layers and with/without staircase electron injectors.