Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)

Abstract

Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co-workers develop a tip-enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which can find wide application in the thermal management of GaN-based electronics.