Ballistic spin transport in DC-bias single top gate p-type narrow channel device with Zeeman–Rashba effects

Abstract

The ballistic transport of holes in a p-type quasi-one-dimensional channel system is investigated without considering the coupling effect of the light and heavy holes. A top gate (TG) is used to form a potential barrier in the quantum channel with Zeeman–Rashba (ZR) effects. The Luttinger Hamiltonian and propagation matrix method are used to examine the relationship between the conductance and the incident hole energy. The results show that when the gate width L is large, an electron-like bound state (E-BS) structure is formed at the inflection point of the spin-down branch. When a positive gate potential energy is applied (U0>0), the light and heavy hole spins form an electron-like quasi-bound state (E-QBS) at the top of the branch under the hole spin. Conversely, when a negative gate potential energy (U0<0) is applied, the light and heavy hole spins form a hole-like quasi-bound state (H-QBS) structure at the bottom of the branch.