Abstract
Simulating nanoscale devices with high accuracy, particularly towards 10nm feature sizes, requires highly efficient fully quantum mechanical simulators. In this work fully quantum mechanical simulator based on Contact Block Reduction (CBR) method has been used to investigate the behaviour of 10nm FinFET device in the ballistic regime of operation. Simulation results show the transformation from multiple channels into a single merged channel as the fin width is reduced gradually. Also we observe that short channel effects can be minimized by reducing the fin width which is evident from the device transfer characteristics presented in this paper.
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