Abstract
Ballistic Electrons The Coulomb drag effect in lateral n+–i–n–n+ graphene diode/transistor structures with ballistic injection of graphene Dirac fermions makes it possible to strongly modify the current-voltage characteristics to produce “gain” in the terahertz frequency range, leading to voltage- and current-driven switches, frequency multipliers, and terahertz emitters. More details can be found in article number 2100694 by Victor Ryzhii and co-workers.
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