Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field‐Effect Transistors and Lateral Diodes

Abstract

Ballistic Electrons The Coulomb drag effect in lateral n+–i–n–n+ graphene diode/transistor structures with ballistic injection of graphene Dirac fermions makes it possible to strongly modify the current-voltage characteristics to produce “gain” in the terahertz frequency range, leading to voltage- and current-driven switches, frequency multipliers, and terahertz emitters. More details can be found in article number 2100694 by Victor Ryzhii and co-workers.