Ballistic injection of electrons in metal-semiconductor junctions. III. Phonon and sub-band spectroscopy of silicon inversion layers

Abstract

For pt.II see ibid., vol.13, no.26, p.L717 (1980). Results are presented on the ballistic injection of electrons into an Si inversion layer at 77K. The results illustrate the expected quenching of low-energy f scattering by the lifting of the valley degeneracy. Phonon series associated with different sub-bands are revealed and the separation of fourfold degenerate sub-bands can be detected.