Abstract
Ge exhibits a high bulk hole mobilty making it an attractive channel material for pMOSFET devices. For improving the device performance and suppressing short channel effects ultra-thin-body (UTB) Ge-on-insulator ( GeOI) structures have been researched throughly. Recently <;110>; oriented Ge-OI pMOSFETs grown on (110) surface were shown to exhibit enhanced hole mobility, which was 3 times compared to (100)/<;100>; Si and 2.3 times (100)/<;100>; Ge pMOSFETs. Due to heavy warping within valence bands and finite atomic granularity in sub-10 nm thick devices, atomistic modelling becomes important. To analyse the recent experimental results a tight binding based 10 band sp3s*d5 (including SO coupling) bandstructure model for is used for UTB Ge. It has been reported in literature that carrier mobility is closely correlated with carrier injection velocity near the top-of-the barrier or the virtual source region. Hence in this paper ballistic injection velocity (vinj) is used as the metric for analysing UTB Ge device performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
