Abstract
Abstract We have solved the Boltzman equation for a submicron N + -N - -N + GaAs structure within a two-valley model using energy-dependent relaxation times. Ballistic electrons produce a large peak in the velocity-distribution function throughout much of the N - region. Transfer of electrons from the lower to upper valley in the N - layer causes an accumulation of charge near the collecting N + region. Transfer of electrons back from the upper to the lower valley in the collecting N + region creates two new peaks in the distribution function which we call ballistic electron echoes.
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