Abstract
As it's well. l~own, the increase of the operati.ng frequencies of GaAs Shcttky barrier diodes was aocompined by decrease of devices active area size up to submicrometres. Application of a microwave signal to the diode with submicrometre active area provides penetrating of a microwave e!ectromag~etic field to the neutral part of the diode active area. It leads, in its t~mn to electron heating and unstationaz~ phenomena taking place d~'ir~ the drift of electrons through neutral area. The <mstationary electron drift influences considerably the boundary character of depletion area moving Lmder the barrier and, as a consequence such diode charcterististics as cut off operating frequency and diode barrier capacity modulation depth. The object of this paper is to investigate theoretically heating and ballistic electron transfere influencir@ the main dynamic parameters of G~s Shottky-barrier diode. The diode active area was devided into a deplation area and the neutral area to simulate the diode operatir~ at high frequencies [I]. Electric field distribution in the diode was determined by Poisson-equation having in a deplation area the view:
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