Abstract
We have performed ballistic electron emission microscopy measurements on the NiSi2/Si(111) system under UHV conditions. Schottky barrier heights have been measured for types A and B interfaces and are found to be in agreement with other techniques. Through correlations between structural defects in the silicide and local increases in collector currents, we find that elastic scattering in the film can increase ballistic electron transmission rates across the interface.
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