Abstract
In this work, we employ the ballistic electron emission microscopy and spectroscopy (BEEM/S) to investigate the electronic properties of self-assembled InAs quantum dots on a GaAs substrate. The BEEM spectra are taken both on the dots and in the area between the dots, i.e. on the InAs wetting layer, and the corresponding barrier heights are determined. The local barrier-height variations on the dots and on the InAs wetting layer are studied systematically and compared with data from the literature obtained on strained InAs layers of various thicknesses. In addition, the temperature dependence of the InAs/GaAs barrier height is investigated.
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