Abstract
This article presents experimental results supporting the role of the ballistic transport in strong “red” photoluminescence (PL) of porous silicon (PSi). It is shown that this PL band connects with emission of oxide-related defects at the Si/SiO x interface. The dependence of an intensity of interface-defect related photoluminescence on morphology and the average size of Si nano-crystallites on porous silicon surface has been investigated. The peculiarities of Raman and PL excitation spectra in dependence on the average size of Si nano-crystallites have been studied as well. Confirmation of ballistic effect role is important for understanding the photoluminescence mechanism in Si nano-crystallites and successful application of silicon low-dimensional structures in optoelectronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
