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Abstract
The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1 b) is shorter than the elastic mean free path (1 e) determined by the resistivity and mobility. However, the reduction ratio of 1 b to 1 e is nearly the same in the different mobility samples. The increasing rates of 1 e and 1 b with respect to electron concentration are also similar. It is interesting that the proportion of 1 b to 1 e hardly depends on electron concentrations and electron mobility.
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