Abstract
In semiconductor manufacturing, defect inspection in non-patterned wafer production lines is essential to ensure high-quality integrated circuits. However, in actual production lines, achieving both high efficiency and high sensitivity at the same time is a significant challenge due to their mutual constraints. To achieve a reasonable trade-off between detection efficiency and sensitivity, this paper integrates the time delay integration (TDI) technology into dark-field microscopy. The TDI image sensor is utilized instead of a photomultiplier tube to realize multi-point simultaneous scanning. Experiments illustrate that the increase in the number of TDI stages and reduction in the column fixed pattern noise effectively improve the signal-to-noise ratio of particle defects without sacrificing the detecting efficiency.
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