Abstract
In this work, by sandwiching a p-AlGaN layer into the n-AlGaN layer, we generate an energy barrier in the n-AlGaN layer to improve the current spreading effect of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The abrupt energy barrier can balance the resistivity in the n-AlGaN layer, and this leads to the better lateral current distribution in the p-type hole injection layer. Numerical and experimental results show that the homogenized current distribution enables the enhanced external quantum efficiency (EQE) for the proposed DUV LED. In addition, the better conductivity modulation arising from the more homogenized current distribution decreases the forward voltage and suppresses the self-heating effect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
