Abstract
Hot-carrier transport in a type-II semiconductor superlattice is investigated here with use of a balance-equation analysis. For the dc case, electron temperature, hole temperature, electron drift velocity, and hole drift velocity, as well as nonlinear resistivity, are all calculated as functions of the applied steady-state electric field and lattice temperature (and carrier concentration). In this, we take account of both intralayer and interlayer carrier-carrier interactions between like carriers (and associated dynamic screening) as well as interactions between electrons and holes, and also include carrier-phonon and carrier-impurity scattering interactions. Linear high-frequency transport in a type-II superlattice is also examined here, with the determination of the memory-function contribution due to dynamically screened electron-hole scattering, including plasmon contributions which can be significant at low temperature for a closely packed superlattice. In this, we study the dynamic resistivity as a function of frequency, temperature, geometrical parameters of the type-II superlattice, and effective masses.
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