Abstract
In this paper, the growth of barium hexaferrite thin films on single crystal 6H silicon carbide was demonstrated. The preparation was done using pulsed laser deposition with a KrF excimer laser operating at 248 nm wavelength with 200 mJ energy per shot. The structure of the thin films were characterized using X-ray diffraction, AFM and SEM. The coercivities and the FMR linewidth of the films were determined using VSM.
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