Abstract
BaFe12O19 hexaferrite films have been produced on thermally oxidized single-crystal silicon (SiO2/Si) substrates by sequential ion-beam sputtering of BaFe2O4 and α-Fe2O3 targets in an argon-oxygen atmosphere. Their crystal structure has been studied, and the origin of the impurity phases forming during heat treatment has been identified. The results show that heat treatment may lead to the formation of eutectic melts. As a result, the hexaferrite films may contain spherulites.
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