Abstract
The sequence of surface reconstructions on GaAs(001), usually observed under As desorption in the temperature range from 450 to 580 °C, was obtained by atomic hydrogen (AH) reaction with the oxide-covered GaAs(001) surfaces in the temperature range from 420 to 280 °C. With the decrease in annealing temperature under AH treatment of oxide-covered GaAs(001) surfaces, the recon- structions changed from As-rich (2 × 4)/c(2 × 8) at 420 °C through the intermediate (2 × 6)/(3 × 6) at 380 °C, Ga- stabilized (4 × 2)/c(8 × 2) at 350 °C and (4 × 6) at 330 °C, to a very Ga-rich (4 × 4) at 280 °C, in the order of Ga/As ratio increase. The observed backward reconstructions on the GaAs(001) surface are explained by AH-induced Ga accumulation on the surface and by surfactant activities of AH allowing low-temperature ordering. The Ga-rich (4 × 4) surface structure covered by ΘGa ≈ 0.8 ML was reconstructed to a new Ga-terminated structure with the symmetry of As-rich (2 × 4)/c(2 × 8) surface under vacuum annealing at the temperature higher than 560 °C. DFT calculations support the existence of the energetically favored Ga-rich (2 × 4) reconstruction described by the mixed-dimer model, developed for InP(001)-(2 × 4) surface, and predict the coexistence of (2 × 4) and (4 × 4) reconstructions on GaAs(001) at the Ga-rich limit.
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