Abstract

A backwall superstrate device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices for thin absorbers is demonstrated. The backwall structure (glass/In2O3-SnO2/MoO3-x/Cu(In,Ga)Se2/CdS/i-ZnO/Ag) utilizes a MoO3−x transparent back contact to allow illumination of the device from the back. In combination with a silver front reflector this cell structure is tailored to enhance performance of devices with submicron thick absorbers. It was found that devices with the backwall configuration outperform substrate devices in the absorber thickness range dCIGS = 0.1-0.5 μm. The advantage of the backwall configuration is mainly through superior JSC, achieved by application of a front reflector and elimination of parasitic absorption in CdS.

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