Abstract
The authors report a background-limited photodetector (BLIP) infrared hot-electron transistor (IHET) with current density compatible with the read-out circuit at 77 K. To reduce J/sub D/ (dark current density), a novel GaAs/Al/sub x/Ga/sub 1-x/As quantum-well infrared photodetector (QWIP), in which the aluminum molar ratio of the barriers increases in three steps, has been designed. This barrier is able to suppress the dark current due to thermally assisted tunneling by providing a thicker effective when the structure is under bias. The remaining J/sub D/ is also largely eliminated by designing a bandpass filter placed adjacent to the QWIP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
