Abstract
Tunneling spectroscopy is used to determine the background impurity distribution in the GaAs buffer layer on GaAs-AlGaAs heterostructures. On a coupled two-dimensional system, consisting of an accumulation layer and an inversion layer separated by a thin AlGaAs barrier, resonant tunneling processes are used to determine the subband energies and the potential profiles in both two-dimensional channels. Comparing the measured peak positions in the resonant tunneling current with the results obtained from self-consistent calculations, the depth dependence of the residual charged impurities in the GaAs buffer is obtained over the first 1200 Å below the AlGaAs-GaAs interface. This information is a crucial sample parameter for all high-mobility two-dimensional electron systems and cannot be obtained from Hall measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
