Abstract
Extremely low backgating currents ( approximately 30-40 mu A) are measured in 0.1 mu m gate In/sub 0.3/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP MODFETs having a new buffer layer material, Er-doped In/sub 0.52/Al/sub 0.48/As, grown at 500 degrees C by MBE. Rare-earth doped GaAs and the lattice-matched ternary have resistivity approximately 10/sup 2/-10/sup 5/ Omega -cm depending on Er-doping level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
