Abstract
The carrier mobility in advanced ultra-thin SOI transistors with n- and p-channels was measured using the Y-function and the transconductance peak methods. The mobilities at front channel and back channel were investigated as a function of the opposite gate bias and channel width. The results confirm that the mobility extracted from the Y-function is greatly overestimated when the opposite channel is activated. The experiments also show that the electron mobility is higher at the back channel than at the front channel. Finally, a decrease in mobility is observed in narrower channels.
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