Abstract
Multi‐layer structure of V2OX/SiOX/NiOX with improved hole‐selectivity has been demonstrated as effective rear contact in p‐type c‐Si solar cells, achieving 22.03% efficiency. Inserting SiOX interlayer further assists in suppressing the interfacial reaction and elemental migration between V2OX and NiOX. The innovative stack design and interface engineering provide promising avenues for efficient manipulation of charge carriers in photovoltaic devices. image
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