Abstract

physica status solidi cVolume 8, Issue 9 Inside Front Cover Back Cover: Phys. Status Solidi C 9/2011 First published: 01 September 2011 https://doi.org/10.1002/pssc.201190026AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The paper of Christina Bückers et al. on pp. 2558–2563 reviews the application of a systematic microscopic theory for the optical and electronic properties of semiconductors. The theory is applied to quantitatively model and analyze different semiconductor systems. Detailed theory–experiment comparisons are shown for a variety of quantum well gain materials. It is demonstrated how the analysis can be used to aid in the design of modern semiconductor laser devices. The figure shows the comparison of measured (circles) and calculated (solid curves) modal gain spectra in a (GaIn)Sb laser structure for various pump currents. Volume8, Issue9Special Issue: Fourth International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA2010); see further papers in Phys. Status Solidi A 208, No. 8 (2011)September 2011 RelatedInformation

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