Abstract
AbstractThe internal gettering technology of Czochralski silicon (Cz‐Si) is widely used in the process of ultra large scale integrated circuits for gettering metal contamination in order to increase the yield. However, its capability has been limited due to the reduction of both the oxygen content in large‐diameter silicon wafers during crystal growth and the thermal budget during device fabrication. To improve the internal gettering efficiency, impurities may be intentionally doped into Cz‐Si. This so‐called ‘impurity engineering’ is suggested by Deren Yang et al. on p. 625. As an example, Cz‐Si is doped by germanium. It is found that both denuded zones of suitable width for device fabrication and denser bulk microdefect regions for gettering of metallic contamination atoms are generated beneath the wafer surface and in the wafer bulk, respectively, which is beneficial for internal gettering. Therefore, Ge‐doped Czochralski silicon is proposed to be one of the candidate silicon materials used for next generation integrated circuits (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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