Abstract
Nitride-based light-emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN-based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely accepted. In his Feature Article on pp. 2217–2225, Joachim Piprek provides a snapshot of the present state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop. This simple model considers both Auger recombination and carrier leakage as potential explanations of the efficiency droop. As both of these explanations exhibit some weaknesses, the search for additional and improved models of the LED efficiency droop continues.
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