Abstract
HFETs were grown by MOVPE consisting of 28 nm AlGaN on 1 μm GaN (all undoped) on conducting, n-type, 4H-SiC. The conducting nature of the SiC allowed a substrate bias to be applied to the device giving the opportunity to change the 2DEG concentration by changing the GaN depletion region width, and so obtain information about the electrically active centres in the semiinsulating GaN. It was shown that the GaN material was p-type with a net (deep level) acceptor density of ∼1.5 x 10 17 cm -3 , which dropped with increasing depth below the surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
