Back bias depending polarization sensitivity of PtSi/p-Si Schottky barrier detectors

Abstract

The optical response of PtSi/p-Si Schottky barrier detectors structured with a lamellar grating was investigated. The quantum efficiency Y for TE and TM polarized light for different samples with grating constants Λ=3 μm, 4 μm, 5 μm, and with a grating amplitude h=1100 nm was measured. The ratio YTM/YTE strongly depends on the back bias of the diode. Theoretical calculations are presented which explain the results taking into account the locally varying Schottky barrier height and optical absorption induced by the grating.