Abstract
ECD Pt process has been developed as an electrode for sub-0.lμm technology device. Using ECD Pt process, it is possible to fabricate higher. stacked BST capacitor with a lot of advantages such as selective deposition which is storage node patterning without Pt RIE process and low cost of ownership (COO). Physical properties of ECD Pt films such as sheet resistance, surface roughness, and film stress are similar to sputtered Pt film. The leakage current density and Tox of CVD BST capacitor using ECD Pt bottom electrode were less than 10−7A/cm2 at ± 1.0V and 0.5nm, respectively. Using the ECD Pt process, three dimensional Pt stacked BST capacitor with 0.22μm width and 0.45μm height was successfully fabricated. The capacitance and leakage current of Pt stacked BST capacitor with ECD Pt showed 29fF/cell and 10−17A/cell in 256k array cell, respectively. In addition to these, we confirmed that it is possible to use ECD Pt film as top electrode.
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