Ba ferrite thin films with large saturation magnetization deposited by sputtering in mixture of Xe, Ar and O/sub 2/

Abstract

BaM ferrite films 5000 /spl Aring/ thick were deposited on a ZnO underlayer at a substrate temperature of 600/spl deg/C by the facing targets sputtering method in a mixture of Xe and Ar of 0.19 Pa in addition to O/sub 2/ of 0.01 Pa. The Xe partial pressure P/sub Xe/ was varied from 0.0 to 0.19 Pa and then the P/sub Ar/ was varied from 0.19 to 0.0 Pa. The films deposited at P/sub Xe/ of 0.19 Pa had almost the stoichiometric composition of BaM ferrite and the crystallite size <D xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">, the full width at half maximum of the rocking curve /spl Delta//spl theta//sub 50/, saturation magnetization 4/spl pi/M/sub s/, squareness S, perpendicular coercivity H/sub c/spl perp// were 300 /spl Aring/, 3.7/spl deg/, 5.1 kG, 0.51 and 2.3 kOe, respectively. It should be noted that it had larger 4/spl pi/M/sub s/ than that of bulk BaM ferrite, for which 4/spl pi/M/sub s/ is 4.8 kG.&lt;<ETX>&gt;</ETX></D>