Abstract
AbstractLinear dielectrics are widely used to create high power capacitors, where it is a big challenge to achieve high energy storage density in such dielectrics. Here, Ba‐based complex perovskite ceramics with high dielectric strength, medium dielectric constant, and ultra‐low dielectric loss are proposed as the candidates for high energy storage density dielectric materials, and the significant effects of 1:2 B‐site ordering and ordering domain structure are systematically investigated. In Ba(Mg1/3Nb2/3)O3 ceramics, high dielectric strength of 1452 kV cm−1 combined with high energy storage density of 3.31 J cm−3 are achieved in the samples after post‐densification annealing, and they are 28% and 57%, respectively, higher than those in the as‐sintered samples. The significant enhancement of energy storage performance could be attributed to the increased B‐site ordering degree, and the uniform ordering domain structure. Furthermore, amorphous alumina thin films are introduced as the charge blocking layers, which significantly enhance the energy storage density to 5.09 J cm−3. The present work provides a new approach to develop the dielectric ceramics with high energy storage density.
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