Abstract
Self-assembly of BD-rich AxB1−xCyD1−y was studied for a lot of semiconductor alloys. An occurrence of identical clusters should be due to a decrease of the bond energy, internal strain energy or both of them. An arrangement of clusters is disordered since the contents of minority atoms are in the dilute or ultra dilute limits in the considered alloys. B4/32Ga28/32Sb10/32As22/32 semiconductor alloy with the three-dimensional superlattice is presented. Such superlattice should be stable against disordering due to its minimal free energy. The superlattice is formed by the identical cubic units consisting of 64 atoms and is the three-dimensional semiconductor soft X-ray diffraction grating.
Highlights
Crystal engineering is one of the pathways to extend the class of semiconductors for device applications
short-range order (SRO) is caused by the bond energy and internal strains depending on the atomic location [4,5]
B4/32Ga28/32Sb10/32As22/32 superlattice is the semiconductor three-dimensional soft X-ray diffraction grating with period 23/2aGaAs = 1.598 nm in the directions, period 22aGaAs = 2.260 nm in the directions and period 31/223/2aGaAs = 2.768 nm in the directions, where aGaAs is the lattice parameter of GaAs
Summary
Crystal engineering is one of the pathways to extend the class of semiconductors for device applications. The superlattice forms by the identical cubic units consisting of 64 atoms and is the three-dimensional semiconductor soft X-ray diffraction grating. The formation of clusters with two or more nitrogen atoms is improbable since it will increase significantly the internal strains. The 1N4Al and 1As4Ga identical clusters formation was considered for GaAs-rich AlxGa1-xNyAs1-y and AlN-rich GaxAl1-xAsyN1-y (x > 4y) alloys, respectively [7].
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